Noninvasive nature of corona charging on thermal Si/SiO2 structures
نویسندگان
چکیده
The corona charging technique is widely utilized in commercial Si/SiO2 semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argued that the corona charging approaches are inherently unreliable and invasive. In this work we show that this is not the case. We find that low-field corona biasing is essentially noninvasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures. © 2004 American Institute of Physics. [DOI: 10.1063/1.1789576]
منابع مشابه
The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing
A silicon dioxide (SiO2) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO2–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO2–Si ...
متن کاملXPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix
In this study, the analysis of the XPS Si 2p peaks shows the existence of the five chemical structures corresponding to the Si oxidation states Si n+ (n =0, 1, 2, 3, and 4) in Si-implanted SiO2 films, and the concentration of each oxidation states is determined quantitatively. The evolution of the five Si oxidation states as a function of thermal annealing is studied. On the other hand, Si 2p c...
متن کاملFabrication and characterization of suspended beam structures for SiO2 photonic MEMS
This paper proposes a microfabrication process for the reliable release of SiO2 beam structures. These structures are intended to be utilized in SiO2 photonic MEMS. A major fabrication challenge is the release of thick (>10 μm) SiO2 structures with high yield. A single mask process is developed based on temporary reinforcement of the SiO2 structure. A supporting layer of Si functions as a reinf...
متن کاملTemperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot
Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they hav...
متن کاملPlasma and vacuum ultraviolet induced charging of SiO2 and HfO2 patterned structures
The authors compare the effects of plasma charging and vacuum ultraviolet (VUV) irradiation on oxidized patterned Si structures with and without atomic-layer-deposited HfO2. It was found that, unlike planar oxidized Si wafers, oxidized patterned Si wafers charge up significantly after exposure in an electron-cyclotron resonance plasma. The charging is dependent on the aspect ratio of the patter...
متن کامل